ST2342 n channel enhancement mode mosfet 5.0a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST2342 2006. v1 description ST2342 is the n-channel logic enhancement mo de power field effect transistor which is produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. the product is in a very small outline surface mount package. pin configuration sot-23-3l 1.gate 2.source 3.drain part marking sot-23-3l y: year code a: process code ordering information part number package part marking ST2342s23rg sot-23l 42ya process code : a ~ z ; a ~ z ST2342s23rg s23 : sot-3l23 ; r : tape reel ; g : pb ? free feature z 20v/4.8a, r ds(on) = 26m (typ.) @v gs = 4.5v z 20v/4.5a, r ds(on) = 28m @v gs = 2.5v z 20v/4.0a, r ds(on) = 36m @v gs = 1.8v z super high density cell design for extremely low r ds(on) z exceptional on-resistance and maximum dc current capability z sot-23 package design 3 1 2 d g s 3 1 2 42ya http://www..net/ datasheet pdf - http://www..net/
ST2342 n channel enhancement mode mosfet 5.0a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST2342 2006. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage v dss 20 v gate-source voltage v gss 12 v continuous drain currenttj=150 ) t a =25 t a =70 i d 5.0 4.0 a pulsed drain current i dm 13 a continuous source current (diode conduction) i s 1.0 a power dissipation t a =25 t a =70 p d 1.25 0.8 w operation junction temperature t j 150 storgae temperature range t stg -55/150 thermal resistance-j unction to ambient r ja 140 /w http://www..net/ datasheet pdf - http://www..net/
ST2342 n channel enhancement mode mosfet 5.0a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST2342 2006. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 20 v gate threshold voltage v gs(th) v ds =vgs,i d =250ua 0.4 1.0 v gate leakage current i gss v ds =0v,v gs = 12v 100 na v ds =20v,v gs =0v 1 zero gate voltage drain current i dss v ds =20v,v gs =0v t j =55 10 ua on-state drain current i d(on) v ds R 5v,v gs =4.5v 6 a drain-source on-resistance r ds(on) v gs =4.5v,i d =5.0a v gs =2.5v,i d =4.5a v gs =1.8v,i d =4.0a 0.026 0.028 0.036 forward transconductance g fs v ds =15v,i d =4.8a 30 s diode forward voltage v sd i s =1.0a,v gs =0v 0.8 1.2 v dynamic total gate charge q g 10 13 gate-source charge q gs 1.4 gate-drain charge q gd v ds =10v v gs =4.5v i d ? 4.8a 2.1 nc input capacitance c iss 600 output capacitance c oss 120 reverse transfer capacitance c rss v ds =10v v gs =0v f=1mh z 100 pf 15 25 turn-on time t d(on) tr 40 60 45 65 turn-off time t d(off) tf v dd =10v r l =10 i d =1.0a v gen =4.5v r g =6 30 40 ns http://www..net/ datasheet pdf - http://www..net/
ST2342 n channel enhancement mode mosfet 5.0a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST2342 2006. v1 typical characterictics (25 unless noted) http://www..net/ datasheet pdf - http://www..net/
ST2342 n channel enhancement mode mosfet 5.0a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST2342 2006. v1 typical characterictics (25 unless noted) http://www..net/ datasheet pdf - http://www..net/
ST2342 n channel enhancement mode mosfet 5.0a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com ST2342 2006. v1 sot-23l package outline http://www..net/ datasheet pdf - http://www..net/
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